2016-1(18)

Design, manufacturing and commissioning of nuclear industry equipment

Article NameMultichannel Radiation-Hardened Instrumentation Amplifier for Sensor Systems and Analog Interfaces of Demanding Application (2)
AuthorsN.N. Prokopenko, N.V. Butyrlagin, A.V. Bugakova, A.A. Ignashin
Address

Don State Technical University, 1 Gagarin Sq., Rostov-on-Don, Russia, 344000
e-mail: prokopenko@sssu.ru

AbstractThe article considers the design features of the instrumentation amplifier (IA) for sensor systems, realized on the radiation-hardened microcircuits of AC_1_4, AC_2_1 (OJSC “MRIMI”, Minsk city). The new architecture of IA is developed, which can operate without resistors of common negative feedback with classical bridge measuring circuits and provides higher common-mode rejection ratio. In IA the digital control of the transfer ratio is available due to the elements commutation of the array “R-2R” by CMOS transistors. The feature of the suggested IA lies in application of the transistors of various physical natures in its input stage – Bi-JFETs and JFETs. The use of the complementary CMOS transistors in the input stage of IA is prospective, besides one of them must have an internal channel and another one - an induced one. The low offset voltages and the absence of classical sources of the reference current, setting the steady-state behavior of the input differential stage, are typical for the suggested circuit of IA. A big number of inputs for signal processing of a large number of sensors is possible in IA. The modification of IA with higher fast response in the large signal mode, which is provided due to the application of the input differential stages with the extended range of active work, is suggested.
Keywordsinstrumentation amplifier, sensor systems, analog interfaces, radiation hardness, differential difference amplifier
LanguageRussian
References

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