2017-1(22)

Design, manufacturing and commissioning of nuclear industry equipment

Article NamePrecision Radiation-Hardened BijFet OP AMP for Low-temperature Analog Interfaces Sensors
AuthorsO.V. Dvornikov*1, N.N. Prokopenko**, ***2, I.V. Pakhomov**3, A.A. Ignashin**4, A.V. Bugakova**5
Address

O.V. Dvornikov*1, N.N. Prokopenko**, ***2, I.V. Pakhomov**3, A.A. Ignashin**4, A.V. Bugakova**5

* Plc., “Minsk Research Instrument-Making Institute”
Kolasa st., 73, Minsk, Belarus,  220113
1 e-mail: Oleg_dvornikov@tut.by 
ORCID iD: 0000-0001-6450-9090
Scopus Author ID: 6602465259
WoS ResearcherID: I-7207-2013

** Don State Technical University 
Gagarina sq. 1, Rostov-on-Don, Russia, 344000
2 e-mail: prokopenko@sssu.ru 
ORCID iD: 0000-0001-8291-1753
Scopus Author ID: 25227786700 
WoS ResearcherID: I-6599-2013;
3 e-mail:  ilyavpakhomov@sssu.ru
ORCID iD: 0000-0001-9861-7153
Scopus Author ID: 56535229400
WoS ResearcherID: E-4208-2017
4 e-mail: igan_96@mail.ru 
ORCID iD: 0000-0002-6390-4205
Scopus Author ID: 57190163883 
WoS ResearcherID: E-1358-2017;
5 e-mail: annabugakova.1992@mail.ru  
ORCID iD: 0000-0001-9255-0015
Scopus Author ID: 56543776600
WoS ResearcherID: E-6820-2014

*** Institute for Design Problems in Microelectronics of Russian Academy of Sciences (IPPM RAS)
Sovetskaya st. 3,  Zelenograd, Russia, 124681

AbstractThe original architecture and circuit design of the precision BiJFet operational amplifier (OA), which provides a systematic component of offset voltage no more than 8 μV in the temperature range -197 ÷ + 27С, with neutron flux up to 1017 N / m2 and accumulated radiation dose up to 10 kGy, was considered. The OA circuit has a high symmetry of the input circuits, and three high-impedance nodes, this makes possible to obtain an open-loop gain more than 80 dB. The choice of CAD and SPICE-models of array chip AC 1.3 transistors, which used to research the characteristics of the op-amp, was substantiated.
Keywordsradiation hardness, cryogenic temperature, general-circuit simulation, SPICE-models, analog integrated circuit, sensors, analog interfaces, offset voltage, neutron flux, accumulated radiation dose
LanguageRussian
References

[1] Dvornikov O., Chehovskij V., Djatlov V., Prokopenko N. Osobennosti analogovykh interfeysov datchikov. Chast 1 [Features analog sensor interfaces. Part 1]. Sovremennaja jelektronika [Modern Electronics]. 2013. Vol. 2. pp. 44-49. (in Russian)

[2] Dvornikov O.V., Tchekhovski V.A., Diatlov V.L., Bogatyrev Yu.V., Lastovski S.B. Radiatsionno-stoykie analogovye integralnye skhemy [Radiation hardened analog IC]. Problems of Perspective Micro- and Nanoelectronic Systems Development – 2012. Proceedings, Edited by A. Stempkovsky, M. Pub. IPPM RAS, 2012, pp. 280–283. (in Russian).

[3]  Dvornikov O.V., Tchekhovski V.A., Diatlov V.L., Prokopenko N.N. Influence of Ionizing Radiation on the Parameters of an Operational Amplifier Based on Complementary Bipolar Transistors. Russian Microelectronics, 2016, Vol. 45, No. 1, pp. 54–62. DOI: 10.1134/S10 63739716010030. (in Russian).

[4] Prokopenko N.N., Butyrlagin N.V., Bugakova A.V., Ignashin A.A. Mnogokanalnyj radiacionno-stojkij instrumentalnyj usilitel dlya datchikovyкh sistem i analogovyкh interfejsov otvetstvennogo primeneniya [Multichannel Radiation-Hardened Instrumentation Amplifier for Sensor Systems and Analog Interfaces of Demanding Application]. Globalnaya yadernaya bezopasnost [Global Nuclear Safety], 2016, №1(18), ISSN 2305-414X, eISSN 2499-9733, pp. 76–86 (in Russian)

[5] Dvornikov O.V., Chehovskij V.A., Djatlov V.L., Bogatyrev Ju.V., Lastovskij S.B. Izmenenie parametrov komplementarnykh bipolyarnykh tranzistorov pri vozdeystvii ioniziruyushchikh izlucheniy [Changing the complementary bipolar transistors when exposed to ionizing radiation]. Voprosy atomnoj nauki i tehniki “VANT” [Problems of Atomic Science and Technology "PAST"], 2015, pp. 17-22. (in Russian).

[6] Dvornikov O.V., Tchekhovski V.A., Diatlov V.L. Equipments to Single Photon Registration. Part 1. Features and Possibilities of Multi-Channel Photodetectors with Intrinsic Amplification. (Review). Devices and Methods of Measurements, 2012, №2, pp. 5–14. (in Russian).

[7] Dvornikov O.V., Tchekhovski V.A., Diatlov V.L., Prokopenko N.N. Modul na maloshumyashchikh polevykh tranzistorakh dlya obrabotki signalov lavinnykh fotodiodov [Low noise electronics module for avalanche photodiode signal readou]. Sovremennaja jelektronika [Modern Electronics], 2014, №8, pp. 82–87. (in Russian).

[8] Ardelean J., Citterio M., Hrisoho A., Manfredi P.F, Speziali V., Truong K. On the noise behaviour of DMILL charge and current-sensitive preamplifier architectures. Nuclear Instruments and Methods in Physics Research, 1998, Vol. A406, pp. 127–138. (in English)

[9] Dvornikov O.V., Prokopenko N.N., Butyrlagin N.V., Bugakova A.V. Perspektivy primeneniya novykh mikroskhem bazovogo matrichnogo i bazovogo strukturnogo kristallov v datchikovykh sistemakh [Perspectives of application of new chips of analog master slice array (AGAMC-2.1) and configurable structured array (MH2XA010) of crystals (JSC MNIPI, Minsk) in the radiation-hardened sensor systems of robots and analog processors]. SPIIRAS Proceedings, 2016, Issue 2(45), pp. 157–171, DOI: http://dx.doi.org/10.15622/sp.45.10 (in Russian).

[10]     Dvornikov O.V., Prokopenko N.N., Pakhomov I.V., Butyrlagin N.V., Bugakova A.V. Proektirovanie radiacionno-stojkikh analogovykh processorov i preobrazovatelej signalov datchikov na osnove bazovogo strukturnogo kristalla MH2XA010 [Design of the radiation-hardened analog processors and signal converters of the sensors systems based on basic structural crystal MH2XA010]. M. Pub. Radiotekhnika [Radiotechnics], 2016, №2, pp. 107–113. (in Russian).

[11]     Dvornikov O.V.,  Prokopenko N.N., Pakhomov  I.V., Bugakova A.V. The Analog Array Chip AC-1.3 for the Tasks of Tool Engineering in Conditions of Cryogenic Temperature, Neutron Flux and Cumulative Radiation Dose Effects. IEEE EWDTS, 2016, Yerevan, October, 14-17, 2016, pp. 282-285, DOI: 10.1109/EWDTS.2016.7807724 (in English)

[12]     Dvornikov O.V., Tchekhovski V.A., Prokopenko N.N., Bugakova A.V. The Design of the Circuits of Radiation-Hardened Charge-Sensitive Amplifiers Based on the Structured Array (MH2XA010) and Array Chip (AC-2.1).  2016 13th International Scientific-Technical Conference on Actual problems of Electronic Instrument Engineering (APEIE). In 12 Volumes. Vol. 1, Part 1, Novosibirsk, 2016. pp. 253–258, DOI: 10.1109/APEIE.2016.7802268 (in English)

[13]     Dvornikov O.V., Bozhatkin О.А., Prokopenko N.N., Bugakova A.B., Butyrlagin N.V. Operation-routing sequence of production of the radiation-hardened microcircuits of the structured array MH2XA010 for multichannel sensor systems. 2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE-2016), September 22–23, 2016, Saratov, Russia. (in English)

[14]     Starchenko E.I., Prokopenko N.N., Budyakov P.S. The Radiation-Hardened Voltage References On Bipolar and JFET Transistors. Proceedings of the 8th IEEE GCC Conference and Exhibition, Muscat, Oman, 1–4 February, 2015, pp. 1–4. DOI: 10.1109/IEEEGCC.2015.7060065 (in English)

[15]     Dvornikov O.V., Dziatlau V.L., Prokopenko N.N., Petrosiants K.O., Kozhukhov N.V., Tchekhovski V.A. The Accounting of the Simultaneous Exposure of the Low Temperatures and the Penetrating Radiation at the Circuit Simulation of the BiJFET Analog Interfaces of the Sensors. Sibcon 2017, Astana, Kazakhstan. (in English)

[16]     Dvornikov               O.V.,  Grishkov V.N. Kompleksnyj podkhod k proektirovaniju radiacionnostojkikh analogovykh mikroskhem [Radiation hardened analog IC design]. Part 1. Uchet vlijanija pronikajushhej radiacii v “Spice-podobnykh” programmakh [Radiation effects simulation in the "Spice-like" programs]. Problemy razrabotki perspektivnykh mikro- i nanoehlektronnykh sistem – 2010. Sbornik trudov IV Vserossijskoj nauchno-tekhnicheskoj konferencii [Problems of Perspective Micro- and Nanoelectronic Systems Development – 2010]. Proceedings / edited by A. Stempkovsky, M. Pub. IPPM RAS, 2010. pp. 301–306. (in Russian).

[17]     Dvornikov O.V., Prokopenko N.N., Butyrlagin N.V., Pakhomov I.V. The Differential and Differential Difference operational amplifiers of sensor systems based on bipolar- field technological process AGAMC. International Siberian Conference on Control and Communications, Moscow, SIBCON-2016, Russia, 12–14 May, 2016. (in English)

[18]     Dvornikov O.V., Chehovskij V.A., Djatlov V.L., Bogatyrev Ju.V., Lastovskij S.B. Vliyanie bystrykh elektronov na analogovye integralnye elementy i skhemy [Effect of fast electrons in the analog integrated circuit and elements]. Voprosy atom-noj nauki i tehniki. Serija: fizika radiacionnogo vozdejstvija na radiojelektronnuju apparaturu [Issues of atomic science and technology. Series: Physics of radiation ef-fects on electronic equipment], 2012, Vol. 3, pp. 54–59. (in Russian)

[19]     Dvornikov              O.V., Bugakova A.V., Butyrlagin N.V., Prokopenko N.N Patent RF №2014147805/08, 26.11.2014 Precizionnyj operacionnyj usilitel' na osnove radiacionno stojkogo bipoljarno-polevogo tekhnologicheskogo processa. Patent Rossii № 2568384 [Patent RF №2014147805/08, 26.11.2014 Precision operational amplifier based on radiation-hardered bipolar-field process. Patent of Russia № 2568384]. (in Russian)

[20]     Prokopenko N.N., Dvornikov O.V., Butyrlagin N.V., Bugakova A.V. The Radiation-Hardened BiJFet Differential Amplifiers with Negative Current Feedback on the Common-Mode Signal. 2016 13th International conference on actual problems of electronic instrument engineering (APEIE – 2016). Novosibirsk, October 3–6, 2016. In 12 Vol. Vol. 1, Part 1, pp. 104–108, DOI: 10.1109/APEIE.2016.7802224 (in English)

[21]     Prokopenko N.N., Dvornikov O.V., Pakhomov I.V., Butyrlagin N.V.  The Radiation-Hardened Differential Stages and Op Amps without Classical Reference Current Source. 2015 Conference on Radiation Effects on Components and Systems (RADECS), September 14th– 18th, 2015, Moscow, Russia. DOI: 10.1109/RADECS.2015.7365681  (in English)

[22]     Prokopenko N.N., Bugakova A.V. and Pakhomov I.V. The radiation-hardened differential difference operational amplifiers for operation in the low-temperature analog interfaces of sensors. 2016 IEEE East-West Design & Test Symposium (EWDTS), Yerevan, 2016, pp. 1–4, DOI: 10.1109/EWDTS.2016.7807727  (in English)

[23]     Dvornikov O.V., Prokopenko N.N., Bugakova A.V., Ignashin A.A. The Radiation-Hardened Microcircuits of the Multichannel Op Amps with Current Feedback and the Analog Interfaces Based on the Structured Array MH2XA010. Proceedings of 2016 International Siberian Conference On Control And Communications (SIBCON’2016), Russia Moscow MAY 12−14, 2016, DOI: 10.1109/SIBCON.2016.7491790  (in English)

Papers36 - 45
URL ArticleURL Article
 Open Article